Engineering Journal: Science and InnovationELECTRONIC SCIENCE AND ENGINEERING PUBLICATION
Certificate of Registration Media number Эл #ФС77-53688 of 17 April 2013. ISSN 2308-6033. DOI 10.18698/2308-6033
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Article

Feedstock preparing for mc-Si growth

Published: 08.10.2014

Authors: Kutovoy I.S., Radchenko I.N.

Published in issue: #7(31)/2014

DOI: 10.18698/2308-6033-2014-7-1263

Category: Engineering | Chapter: Materials Science

The paper describes one of the variants of the purification process for silicon feedstock, heavily-doped with arsenic silicon. It presents theoretical calculation results of the method’s effectivity. The suggested method includes high-temperature vacuum annealing of melted silicon and subsequent crystal growth by CZ method. We also describe the technique of using this method for the feedstock preparation for multicrystalline silicon ingot growth.


References
[1] Braga A.F.B., Moreira S.P., Zampieri P.R., Bacchin J.M.G., Mei P.R. New processes for the production of solar-grade polycrystalline silicon: a review. Solar Energy, Materials and Solar Cells, 2008, vol. 92, pp. 418-424.
[2] Tsai T.H. Modified sedimentation system for improving separation of silicon and silicon carbide in recycling of sawing waste. Separation and Purification, Technology, 2011, vol. 78, pp. 16-20.
[3] Woditsch P., Koch W. Solar grade silicon feedstock supply for PV industry. Solar Energy Materials and Solar Cells, 2002, vol. 72, pp. 11-26.
[4] Esfahani S. Solvent Refining of Metallurgical Grade Silicon Using Iron. Мaster of Applied Science, Materials Science and Engineering University of Toronto, 2010, pp. 45-51.
[5] Nashel’sky A.Ia Proizvodstvo poluprovodnikovykh materialov [Production of semiconductive materials]. Moscow, Metallurgiya Publ., 2003.
[6] Potolokov N.A., Reshetnikov N.M., Kutovoy I.S., Serov A.V., Zhuravlev A.V. Promyshlennoe proizvodstvo mul’tikristallicheskogo kremniya v Rossii: sostoyanie, problemy, perspektivy [Industrial production of multicrystalline silicon in Russia: status, problems and prospects]. Tezisy dokladov VIIMNK po aktual’nym problemam fiziki, materialovedeniya, tekhnologii i diagnostiki kremniya (6-9.07.2010). [Brief outline report of the VII Int. Sci. Conf. on topical problems of physics, materials science, technology and diagnostics of silicon]. Nizhnii Novgorod, NGSU Publ., 2010, pp. 70-72.