The distribution of minority carriers in semi-infinite semiconductor material with defects on the surface after their diffusion from a thin planar source
Published: 09.12.2014
Authors: Kalmanovich V.V., Stepovich M.A., Seregina E.V., Gorbunov A.K.
Published in issue: #1(37)/2015
DOI: 10.18698/2308-6033-2015-1-1349
Category: Mathematic modeling | Chapter: Modeling in materials science
The article considers application of mathematical modeling methods for solving the problem of diffusion of minority carriers (MC), generated in the semiconductor by wide electron beam. The influence of defects on the semiconductor surface on the distribution of MC after their diffusion from a thin planar source into a semi-infinite semiconductor was investigated. The calculations were performed for various materials of semiconductor electronics.
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