Engineering Journal: Science and InnovationELECTRONIC SCIENCE AND ENGINEERING PUBLICATION
Certificate of Registration Media number Эл #ФС77-53688 of 17 April 2013. ISSN 2308-6033. DOI 10.18698/2308-6033
  • Русский
  • Английский
Article

The model of thermostable defect centers formation in gallium arsenide crystals irradiated by neutrons

Published: 15.10.2013

Authors: Kosushkin V.G., Gorbunov A.K.

Published in issue: #6(18)/2013

DOI: 10.18698/2308-6033-2013-6-806

Category: Nanoengineering

The model of defects transformation in the heat-stable defect centers possessing donor properties of gallium arsenide irradiated with neutrons was proposed. The nature of these centers determined by the interaction of artificial radiation defects with impurities and defects in the crystal equilibrium. It was shown that irradiation by neutrons at temperatures above room temperature can be used not only for studying the nature and patterns of defects, but also as a way to change the directional properties of crystals.