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Certificate of Registration Media number Эл #ФС77-53688 of 17 April 2013. ISSN 2308-6033. DOI 10.18698/2308-6033
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Investigation of degradation of resonant tunneling diodes based on nanoscale AlAs/GaAs heterostructures

Published: 15.10.2013

Authors: Makeev M.O., Ivanov Yu.A., Meshkov S.A., Litvak Yu.N., Vetrova N.A.

Published in issue: #6(18)/2013

DOI: 10.18698/2308-6033-2013-6-811

Category: Nanoengineering

    AlAs/GaAs heterostructure, contact area, AuGeNi ohmic contact, resonant tunneling diode, non-linear radio transmitters, degradation phenomena, thermal influence, diffusion coefficient, contact resistance, IR spectral ellipsometry
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